| ₹ 474.22 includes GST and import duties. | |
| B2B customers can avail ₹ 72.32 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
NVMFD5C446NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 40V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -5.2mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 2.2mohm typical at (VGS = 10V, ID = 20A)
- Input capacitance is 3170pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 7nC typical at (VGS = 4.5V, VDS = 32V; ID = 50A)
- Turn-on delay time is 14.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Rise time is 16.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
Product details
Other details
| Brand | ONSEMI |
| Part Number | NVMFD5C446NLT1G |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 464.74 |
| 3-5 | ₹ 459.99 |
| 5-10 | ₹ 450.51 |
| 10+ | ₹ 441.02 |
Bulk discount will be automatically applied during checkout based on quantity.