INFINEON S29GL01GS11TFIV13 Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, TSOP, 56 Pins

S29GL01GS11TFIV13 is a S29GL01GS MIRRORBIT� page-mode flash memory IC fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today�s embedded applications that require higher density, better performance and lower power consumption.

• CMOS 3.0V core with versatile I/O, single supply (VCC) for read/program/erase (2.7V to 3.6V)
• Versatile I/O feature, wide I/O voltage range (VIO): 1.65V to VCC, 110ns random access time
• ×16 data bus, asynchronous 32-byte page read, 512-byte programming buffer
• Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
• Sector erase-uniform 128kbyte sectors, advanced sector protection (ASP), 20 years data retention
• Status register, data polling, and ready/busy pin methods to determine device status
• Suspend and resume commands for program and erase operations, 100000 program/erase cycles
• Separate 1024-byte one time program (OTP) array with two lockable regions
• Thin small outline package (TSOP) standard pinout, industrial (�40 to 85°C) temperature
• VIO = 1.65V to VCC, VCC = 2.7V to 3.6V, highest address sector protected