Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
650V
|
| Continuous Drain Current Id:
7A
|
| Drain Source On State Resistance:
1.2ohm
|
| Transistor Case Style:
TO-220CFM
|
| Transistor Mounting:
Through Hole
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
4V
|
| Power Dissipation:
1.92W
|
| No. of Pins:
3Pins
|
| Operating Temperature Max:
150°C
|
| Product Range:
XP65AN1K2 Series
|
| Qualification:
-
|
Other details
| Brand |
YAGEO XSEMI |
| Part Number |
XP65AN1K2IT |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
