- P-channel 80V (D-S) MOSFET
- TrenchFET® power MOSFET
- Package with low thermal resistance
- Maximum 175°C junction temperature
- Low RDS(on) minimizes power loss from conduction
- Compatible with logic-level gate driving
- 100% Rg and UIS tested
- Applications include battery protection, motor drive control and load switch
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type:
P Channel
|
Drain Source Voltage Vds:
80V
|
Continuous Drain Current Id:
150A
|
Drain Source On State Resistance:
0.0048ohm
|
Transistor Case Style:
TO-220AB
|
Transistor Mounting:
Through Hole
|
Rds(on) Test Voltage:
10V
|
Gate Source Threshold Voltage Max:
2.5V
|
Power Dissipation:
375W
|
No. of Pins:
3Pins
|
Operating Temperature Max:
175°C
|
Product Range:
TrenchFET
|
Qualification:
-
|
Other details
Brand |
VISHAY |
Part Number |
SUP60061EL-GE3 |
Quantity |
Each |
Technical Data Sheet EN |
|
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