Product details
Technical Specifications
 
  
   
    
     Channel Type
     Dual N Channel
     
    
     Drain Source Voltage Vds P Channel
     -
     
    
     Continuous Drain Current Id P Channel
     -
     
    
     Transistor Case Style
     PowerPAIR 3 x 3FS
     
    
     Power Dissipation N Channel
     56.8W
     
    
     Operating Temperature Max
     150°C
     
    
    
   
    
     Drain Source Voltage Vds N Channel
     80V
     
    
     Continuous Drain Current Id N Channel
     36A
     
    
     Drain Source On State Resistance N Channel
     0.016ohm
     
    
    
     Power Dissipation P Channel
     -
     
    
     Product Range
     TrenchFET Gen IV Series
     
    
    
   
  
 
Other details
| Brand | VISHAY | 
| Part Number | SIZF4800LDT-T1-GE3 | 
| Quantity | Each (Supplied on Cut Tape) | 
| Technical Data Sheet EN |  | 
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