Product details
| Channel Type:
Dual N Channel
|
| Drain Source Voltage Vds N Channel:
30V
|
| Drain Source Voltage Vds P Channel:
-
|
| Continuous Drain Current Id N Channel:
60A
|
| Continuous Drain Current Id P Channel:
-
|
| Drain Source On State Resistance N Channel:
0.0028ohm
|
| Drain Source On State Resistance P Channel:
-
|
| Transistor Case Style:
PowerPAIR
|
| No. of Pins:
8Pins
|
| Power Dissipation N Channel:
40W
|
| Power Dissipation P Channel:
-
|
| Operating Temperature Max:
150°C
|
| Product Range:
TrenchFET Gen IV Series
|
| Qualification:
-
|
Other details
| Brand |
VISHAY |
| Part Number |
SIZ988DT-T1-GE3 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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