Vishay SISS63DN-T1-GE3 Mosfet Transistor P Channel 127.5 A 20 V 0.0022 ohm 10 1.5

This is a MOSFET Transistor, P Channel, 127.5 A, 20 V, 0.0022 ohm, 10 V, 1.5 V product from VISHAY with the model number SISS63DN-T1-GE3

Product details

Transistor Polarity	P Channel
Continuous Drain Current Id	127.5A
Drain Source Voltage Vds	20V
On Resistance Rds(on)	0.0022ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	1.5V
Power Dissipation Pd	65.8W
Transistor Case Style	PowerPAK 1212-8S
No. of Pins	8Pins
Operating Temperature Max	150?C
Product Range	TrenchFET Gen III Series
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited

Other details

Brand	VISHAY
Part Number	SISS63DN-T1-GE3
Quantity	Each (Supplied on Cut Tape)
Technical Data Sheet EN

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All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.