Vishay SISS50DN-T1-GE3 Mosfet Transistor N Channel 108 A 45 V 0.00225 ohm 10 2.3

This is a MOSFET Transistor, N Channel, 108 A, 45 V, 0.00225 ohm, 10 V, 2.3 V product from VISHAY with the model number SISS50DN-T1-GE3

Product details

Transistor Polarity	N Channel
Continuous Drain Current Id	108A
Drain Source Voltage Vds	45V
On Resistance Rds(on)	0.00225ohm
Rds(on) Test Voltage Vgs	10V
Threshold Voltage Vgs	2.3V
Power Dissipation Pd	65.7W
Transistor Case Style	PowerPAK 1212
No. of Pins	8Pins
Operating Temperature Max	150?C
Product Range	TrenchFET Gen IV Series
Automotive Qualification Standard	-
MSL	MSL 1 - Unlimited

Other details

Brand	VISHAY
Part Number	SISS50DN-T1-GE3
Quantity	Each (Supplied on Cut Tape)
Technical Data Sheet EN

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All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.