Product details
Channel Type:
P Channel
|
Drain Source Voltage Vds:
30V
|
Continuous Drain Current Id:
34.4A
|
Drain Source On State Resistance:
0.011ohm
|
Transistor Case Style:
PowerPAK 1212
|
Transistor Mounting:
Surface Mount
|
Rds(on) Test Voltage:
10V
|
Gate Source Threshold Voltage Max:
2.5V
|
Power Dissipation:
26.5W
|
No. of Pins:
8Pins
|
Operating Temperature Max:
150°C
|
Product Range:
TrenchFET Series
|
Qualification:
-
|
Other details
Brand |
VISHAY |
Part Number |
SISH107DN-T1-GE3 |
Quantity |
Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
|
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