Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
25V
|
| Continuous Drain Current Id:
185A
|
| Drain Source On State Resistance:
0.001ohm
|
| Transistor Case Style:
PowerPAK SO-8S
|
| Transistor Mounting:
Surface Mount
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
2.2V
|
| Power Dissipation:
65.7W
|
| No. of Pins:
8Pins
|
| Operating Temperature Max:
150°C
|
| Product Range:
TrenchFET Gen IV Series
|
| Qualification:
-
|
Other details
| Brand |
VISHAY |
| Part Number |
SIRA32DP-T1-RE3 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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