Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type:
P Channel
|
Drain Source Voltage Vds:
20V
|
Continuous Drain Current Id:
9.3A
|
Drain Source On State Resistance:
0.018ohm
|
Transistor Case Style:
MICRO FOOT
|
Transistor Mounting:
Surface Mount
|
Rds(on) Test Voltage:
4.5V
|
Gate Source Threshold Voltage Max:
900mV
|
Power Dissipation:
2.7W
|
No. of Pins:
4Pins
|
Operating Temperature Max:
150°C
|
Product Range:
TrenchFET
|
Qualification:
-
|
Other details
Brand |
VISHAY |
Part Number |
SI8425DB-T1-E1 |
Quantity |
Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
|
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