₹ 180.16 includes GST and import duties. | |
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Description
This is a SI6913DQ-T1-GE3 Dual MOSFET , P Channel, 12 V, 12 V, 4.9 A, 4.9 A, 0.016 ohm product from VISHAY with the model number SI6913DQ-T1-GE3
Product details
Channel Type | P Channel |
Transistor Polarity | P Channel |
Drain Source Voltage Vds N Channel | 12V |
Drain Source Voltage Vds | 12V |
Continuous Drain Current Id | 4.9A |
Drain Source Voltage Vds P Channel | 12V |
Continuous Drain Current Id N Channel | 4.9A |
On Resistance Rds(on) | 0.016ohm |
Transistor Case Style | TSSOP |
Continuous Drain Current Id P Channel | 4.9A |
Drain Source On State Resistance N Channel | 0.016ohm |
Transistor Mounting | Surface Mount |
Rds(on) Test Voltage | 4.5V |
Drain Source On State Resistance P Channel | 0.016ohm |
Gate Source Threshold Voltage Max | 900mV |
Power Dissipation Pd | 830mW |
No. of Pins | 8Pins |
Power Dissipation N Channel | 830mW |
Power Dissipation P Channel | 830mW |
Operating Temperature Max | 150°C |
Qualification | - |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
Other details
Brand | VISHAY |
Part Number | SI6913DQ-T1-GE3 |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN | |
Technical Data Sheet EN | |
Product Change Notice EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 176.56 |
3-5 | ₹ 174.76 |
5-10 | ₹ 171.15 |
10+ | ₹ 167.55 |
Bulk discount will be automatically applied during checkout based on quantity.