Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type:
Complementary N and P Channel
|
Drain Source Voltage Vds N Channel:
20V
|
Drain Source Voltage Vds P Channel:
20V
|
Continuous Drain Current Id N Channel:
4A
|
Continuous Drain Current Id P Channel:
4A
|
Drain Source On State Resistance N Channel:
0.045ohm
|
Drain Source On State Resistance P Channel:
0.045ohm
|
Transistor Case Style:
ChipFET
|
No. of Pins:
8Pins
|
Power Dissipation N Channel:
3.1W
|
Power Dissipation P Channel:
3.1W
|
Operating Temperature Max:
150°C
|
Product Range:
Trench Series
|
Qualification:
-
|
Other details
Brand |
VISHAY |
Part Number |
SI5513CDC-T1-GE3 |
Quantity |
Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
|
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