- Dual N-channel 60-V (D-S) TrenchFET® power MOSFET
- 175°C maximum junction temperature
- 100 % Rg Tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds N Channel:
60V
|
| Drain Source Voltage Vds P Channel:
60V
|
| Continuous Drain Current Id N Channel:
6.5A
|
| Continuous Drain Current Id P Channel:
6.5A
|
| Drain Source On State Resistance N Channel:
0.033ohm
|
| Drain Source On State Resistance P Channel:
0.033ohm
|
| Transistor Case Style:
SOIC
|
| No. of Pins:
8Pins
|
| Power Dissipation N Channel:
3.7W
|
| Power Dissipation P Channel:
3.7W
|
| Operating Temperature Max:
175°C
|
| Product Range:
TrenchFET Series
|
| Qualification:
-
|
| MSL:
MSL 1 - Unlimited
|
Other details
| Brand |
VISHAY |
| Part Number |
SI4946BEY-T1-GE3 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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