| ₹ 204.97 includes GST and import duties. | |
| B2B customers can avail ₹ 31.26 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The SI4840BDY-T1-GE3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, POL and IBC applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 40V |
| Continuous Drain Current Id: 19A |
| Drain Source On State Resistance: 0.0074ohm |
| Transistor Case Style: NSOIC |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 3V |
| Power Dissipation: 6W |
| No. of Pins: 8Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | VISHAY |
| Part Number | SI4840BDY-T1-GE3 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 200.87 |
| 3-5 | ₹ 198.82 |
| 5-10 | ₹ 194.72 |
| 10+ | ₹ 190.62 |
Bulk discount will be automatically applied during checkout based on quantity.