| ₹ 60.69 includes GST and import duties. | |
| B2B customers can avail ₹ 9.26 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The SI1029X-T1-GE3 is a N/P-channel complementary MOSFET designed for use with replace digital transistor, level-shifter, battery operated systems and power supply converter circuits applications. It offers ease in driving switches, low offset (error) voltage, low-voltage operation and high-speed circuits.
- Halogen-free
- TrenchFET® power MOSFET
- Very small footprint
- High-side switching
- Low ON-resistance
- ±2V Low threshold
- 15ns Fast switching speed
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: Complementary N and P Channel |
| Drain Source Voltage Vds N Channel: 60V |
| Drain Source Voltage Vds P Channel: 60V |
| Continuous Drain Current Id N Channel: 305mA |
| Continuous Drain Current Id P Channel: 305mA |
| Drain Source On State Resistance N Channel: 1.4ohm |
| Drain Source On State Resistance P Channel: 1.4ohm |
| Transistor Case Style: SC-89 |
| No. of Pins: 6Pins |
| Power Dissipation N Channel: 250mW |
| Power Dissipation P Channel: 250mW |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | VISHAY |
| Part Number | SI1029X-T1-GE3 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 59.48 |
| 3-5 | ₹ 58.87 |
| 5-10 | ₹ 57.66 |
| 10+ | ₹ 56.44 |
Bulk discount will be automatically applied during checkout based on quantity.