| ₹ 183.34 includes GST and import duties. | |
| B2B customers can avail ₹ 27.96 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
- Easy to parallel
- Simple drive requirement
- For automatic insertion
- End stackable
Applications
Power Management
Product details
| Power Dissipation Pd | 1.3W |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 1.3A |
| Transistor Polarity | N Channel |
| No. of Pins | 4Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 100V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | DIP |
| On Resistance Rds(on) | 0.27ohm |
| MSL | - |
Other details
| Brand | VISHAY |
| Part Number | IRFD120PBF |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 179.67 |
| 3-5 | ₹ 177.84 |
| 5-10 | ₹ 174.17 |
| 10+ | ₹ 170.51 |
Bulk discount will be automatically applied during checkout based on quantity.