| ₹ 318.11 includes GST and import duties. | |
| B2B customers can avail ₹ 48.51 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- 175°C Operating Temperature
Applications
Audio, Signal Processing, Industrial
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 1kV |
| Continuous Drain Current Id: 3.1A |
| Drain Source On State Resistance: 5ohm |
| Transistor Case Style: TO-220AB |
| Transistor Mounting: Through Hole |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 4V |
| Power Dissipation: 125W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: - |
Other details
| Brand | VISHAY |
| Part Number | IRFBG30PBF |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 311.75 |
| 3-5 | ₹ 308.57 |
| 5-10 | ₹ 302.2 |
| 10+ | ₹ 295.84 |
Bulk discount will be automatically applied during checkout based on quantity.