| ₹ 462.53 includes GST and import duties. | |
| B2B customers can avail ₹ 70.54 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET� power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150�C Operating temperature
- Easy to parallel
- Simple drive requirement
Applications
Power Management
Product details
| Power Dissipation Pd | 125W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 4.1A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Drain Source Voltage Vds | 800V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220AB |
| On Resistance Rds(on) | 3ohm |
| MSL | - |
Other details
| Brand | VISHAY |
| Part Number | IRFBE30PBF |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 453.28 |
| 3-5 | ₹ 448.65 |
| 5-10 | ₹ 439.4 |
| 10+ | ₹ 430.15 |
Bulk discount will be automatically applied during checkout based on quantity.