Product details
| Channel Type:
N Channel
|
| Drain Source Voltage Vds:
40V
|
| Continuous Drain Current Id:
200A
|
| Drain Source On State Resistance:
660µohm
|
| Transistor Case Style:
S-TOGL
|
| Transistor Mounting:
Surface Mount
|
| Rds(on) Test Voltage:
10V
|
| Gate Source Threshold Voltage Max:
3V
|
| Power Dissipation:
375W
|
| No. of Pins:
6Pins
|
| Operating Temperature Max:
175°C
|
| Product Range:
U-MOSIX-H Series
|
| Qualification:
AEC-Q101
|
Other details
| Brand |
TOSHIBA |
| Part Number |
XPJR6604PB,LXHQ(O |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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