| ₹ 224.79 includes GST and import duties. | |
| B2B customers can avail ₹ 34.28 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
TBD62786AFWG(Z,EHZ is a TBD62786A series BiCD silicon monolithic integrated circuit. Each output has an internal clamp diode that clamps the back electromotive force generated in driving inductive loads.
- 8-ch low active source type DMOS transistor array
- High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
- Input voltage range from -30 to -2.8V (IOUT = -100mA or more, VDS=2.0V, output on, Ta = -40 to 85°C)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Output leakage current is 1.0µA (max, VIN = 0V, VOUT = VGND = -50V, Ta = 85°C)
- Current consumption is 5mA (max, VIN = -2.8V, VGND = -50V, output OPEN, per 1 ch)
- Clamp diode leakage current is 1µA (max, VR = 50V, Ta = 85°C)
- Turn on delay is 0.2µs (typ, VOUT = VGND = -50V, RL = 160 ohm, CL = 15pF)
- Turn off delay is 2.0µs (typ, VOUT = VGND = -50V, RL = 160 ohm, CL = 15pF)
- P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C
Footnotes
Please be careful about thermal conditions during use.
Product details
| Supply Voltage Min: 2V |
| Supply Voltage Max: 50V |
| No. of Outputs: 8Outputs |
| Output Voltage: 50V |
| Output Current: -500mA |
| Driver Case Style: PSOP |
| Product Range: - |
Other details
| Brand | TOSHIBA |
| Part Number | TBD62786AFWG(Z,EHZ |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
Bulk Discount
| Quantity | Price |
| 2 | ₹ 220.29 |
| 3-5 | ₹ 218.05 |
| 5-10 | ₹ 213.55 |
| 10+ | ₹ 209.05 |
Bulk discount will be automatically applied during checkout based on quantity.