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Description
TBD62781AFWG(Z,EHZ is a TBD62781A series BiCD silicon monolithic integrated circuit. A pull-down resistor is built in the output part.
- 8-ch source type DMOS transistor array
- High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
- Input voltage range from 2.0 to 25V (output on, IOUT = -100mA or more, VDS = 2.0V, Ta = -40 to 85°C)
- Output leakage current is 1.0µA (max, VCC = 50V, VIN = 0V, Ta = 85°C)
- Current consumption is 1.5mA (max, output OPEN, VIN = 2.0V, VCC = 50V)
- Turn on delay is 0.4µs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- Turn off delay is 2.0µs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C
Footnotes
Please be careful about thermal conditions during use.
Product details
Supply Voltage Min: 2V |
Supply Voltage Max: 50V |
No. of Outputs: 8Outputs |
Output Voltage: 50V |
Output Current: -500mA |
Driver Case Style: PSOP |
Product Range: - |
Other details
Brand | TOSHIBA |
Part Number | TBD62781AFWG(Z,EHZ |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 217.31 |
3-5 | ₹ 215.09 |
5-10 | ₹ 210.65 |
10+ | ₹ 206.22 |
Bulk discount will be automatically applied during checkout based on quantity.