| ₹ 233.64 includes GST and import duties. | |
| B2B customers can avail ₹ 35.63 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
TBD62308AFG(Z,EL) is a BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.
- 4 channel low active high current sink type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is 1.5mA/ch (max, Ta = 25°C)
- Input voltage range from 0 to VCC-3.5V (output on, IOUT=100mA or upper, VOUT=2V, Ta = -40 to 85°C)
- COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
- Output leakage current is 1.0µA (max, VIN = VCC, VOUT = 50Vm, Ta = 85°C)
- Clamp diode forward current is 1.25A at Ta = -40 to 85°C
- Turn on delay is 1.0µs (typ, VOUT = 50V, RL = 42ohm, CL = 15pF, VCC = 5.0V)
- Turn off delay is 2.0µs (typ, VOUT = 50V, RL = 42ohm, CL = 15pF, VCC = 5.0V)
- HSOP16-P-300-1.00 package, operating temperature range from -40 to 85°C
Footnotes
Please be careful about thermal conditions during use.
Product details
| Supply Voltage Min: 4.5V |
| Supply Voltage Max: 5.5V |
| No. of Outputs: 4Outputs |
| Output Voltage: 50V |
| Output Current: 1.5A |
| Driver Case Style: HSOP |
| Product Range: - |
Other details
| Brand | TOSHIBA |
| Part Number | TBD62308AFG(Z,EL) |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 228.97 |
| 3-5 | ₹ 226.63 |
| 5-10 | ₹ 221.96 |
| 10+ | ₹ 217.29 |
Bulk discount will be automatically applied during checkout based on quantity.