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Description
TBD62003AFNG(Z,EL) is a TBD62003A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.
- 7 channel sink type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is 500mA/ch (max, Ta = 25°C)
- Input voltage range from 2.5 to 25V (output on, IOUT = 100mA or upper, VOUT = 2V, Ta = -40 to 85°C)
- COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Output leakage current is 1.0µA (max, VOUT = 50V, Ta = 85°C, VIN = 0V)
- Turn on delay is 0.4µs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- Turn off delay is 0.8µs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- SSOP16-P-225-0.65B package, operating temperature range from -40 to 85°C
Footnotes
Please be careful about thermal conditions during use.
Product details
Supply Voltage Min: - |
Supply Voltage Max: - |
No. of Outputs: 7Outputs |
Output Voltage: 50V |
Output Current: 500mA |
Driver Case Style: SSOP |
Product Range: - |
Other details
Brand | TOSHIBA |
Part Number | TBD62003AFNG(Z,EL) |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 134.94 |
3-5 | ₹ 133.56 |
5-10 | ₹ 130.81 |
10+ | ₹ 128.05 |
Bulk discount will be automatically applied during checkout based on quantity.