Product Overview
MSC060SMB120B4N is a 1200V, 60mohm silicon carbide (SiC) power MOSFET in a 4-lead TO-247 package. It delivers high efficiency with low switching and conduction losses, fast switching speed, and robust avalanche performance. Designed for high-power and high-temperature applications, it is ideal for use in EV chargers, solar inverters, motor drives, and industrial power supplies.
- Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
- Supports high-frequency operation for smaller magnetics, higher power density, and lower cost
- Superior avalanche ruggedness and short-circuit withstand time
- HV-H3TRB proven capability ensures long-term reliability in high humidity environments
- Lower VGS and standard package enables improved compatibility with standard gate drivers
- Increased creepage distance (notch) improves safety and reliability in high-voltage designs
Product details
| MOSFET Module Configuration |
Single |
| Continuous Drain Current Id |
38A |
| Drain Source On State Resistance |
0.08ohm |
| No. of Pins |
4Pins |
| Gate Source Threshold Voltage Max |
5V |
| Operating Temperature Max |
175°C |
| SVHC |
No SVHC (04-Feb-2026) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
1.2kV |
| Transistor Case Style |
TO-247 |
| Rds(on) Test Voltage |
18V |
| Power Dissipation |
192W |
| Product Range |
mSiC Series |
Other details
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