Product Overview
UHB50SC12E1BC3N is a Silicon Carbide (SiC) cascode JFET module. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si super junction devices. Available in the E1B module package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Advanced Ag sintering die attach technology gives the module superior thermal performance.
- On-resistance RDS(on): 19mohm (typ)
- Operating temperature of 150°C (max)
- Excellent reverse recovery Qrr of 495nC
- 1.2V low body diode voltage VFSD
- Low gate charge QG of 85nC
- Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive
- Low intrinsic capacitance
- ESD protected: HBM class 2 and CDM class C3
Product details
| MOSFET Module Configuration |
Half Bridge |
| Continuous Drain Current Id |
69A |
| Drain Source On State Resistance |
0.024ohm |
| No. of Pins |
18Pins |
| Gate Source Threshold Voltage Max |
6V |
| Operating Temperature Max |
150°C |
| SVHC |
No SVHC (25-Jun-2025) |
| Channel Type |
P Channel |
| Drain Source Voltage Vds |
1.2kV |
| Transistor Case Style |
PIM |
| Rds(on) Test Voltage |
12V |
| Power Dissipation |
208W |
| Product Range |
EliteSiC Series |
Other details
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