Product Overview
ONSEMI UG3SC120009K4S Silicon Carbide MOSFET, Single, N Channel, 120 A, 1.2 kV, 0.011 ohm, TO-247
Product details
| MOSFET Module Configuration |
Single |
| Continuous Drain Current Id |
120A |
| Drain Source On State Resistance |
0.011ohm |
| No. of Pins |
4Pins |
| Gate Source Threshold Voltage Max |
6V |
| Operating Temperature Max |
175°C |
| SVHC |
No SVHC (25-Jun-2025) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
1.2kV |
| Transistor Case Style |
TO-247 |
| Rds(on) Test Voltage |
12V |
| Power Dissipation |
789W |
| Product Range |
EliteSiC Series |
Other details
| Brand |
ONSEMI |
| Part Number |
UG3SC120009K4S |
| Quantity |
Each |
| Technical Data Sheet (547.48KB) EN |
View or download |
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