Product Overview
FF1000UXTR23T2M1B5BPSA1 is an XHP™2 series, 2.3kV, 1000A silicon carbide (SiC) MOSFET half-bridge module. It features Infineon’s advanced .XT interconnection technology for low inductance and reduced switching losses, delivering high efficiency and reliability in demanding power applications. With an on-resistance of approximately 0.95mohm and high thermal performance, it is ideal for renewable energy systems, traction drives, energy storage systems, and industrial motor drives requiring high power density and fast switching performance.
- Continuous drain current (IDN) of 2000A and repetitive peak current (IDRM) of 4000A
- High current density for efficient power handling
- Low inductive design to minimize parasitic effects
- Low switching losses for improved efficiency
- Maximum operating junction temperature (Tvj,op) of 175°C
- AlN substrate offering low thermal resistance
- AlSiC baseplate for excellent thermal cycling capability
- High creepage and clearance distances for enhanced safety
- High CTI (>600) package ensuring superior insulation performance
Product details
| MOSFET Module Configuration |
Half Bridge |
| Continuous Drain Current Id |
1.335kA |
| Drain Source On State Resistance |
1190µohm |
| No. of Pins |
15Pins |
| Gate Source Threshold Voltage Max |
5.15V |
| Operating Temperature Max |
175°C |
| SVHC |
No SVHC (25-Jun-2025) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
2.3kV |
| Transistor Case Style |
Module |
| Rds(on) Test Voltage |
15V |
| Power Dissipation |
- |
| Product Range |
XHP 2 Series |
Other details
| Brand |
INFINEON |
| Part Number |
FF1000UXTR23T2M1B5BPSA1 |
| Quantity |
Each |
| Technical Data Sheet (806.08KB) EN |
View or download |
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