Product Overview
NGFP15T65M3DFPQ is a 650V, 15A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGFP15T65M3DFP is rated to 175°C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5μs. This hard-switching 650V,15A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
Product details
| Continuous Collector Current |
16A |
| Power Dissipation |
38W |
| Transistor Case Style |
TO-220FP |
| Operating Temperature Max |
175°C |
| Product Range |
- |
| Collector Emitter Saturation Voltage |
1.51V |
| Collector Emitter Voltage Max |
650V |
| No. of Pins |
3Pins |
| Transistor Mounting |
Through Hole |
| SVHC |
Lead (25-Jun-2025) |
Other details
| Brand |
NEXPERIA |
| Part Number |
NGFP15T65M3DFPQ |
| Quantity |
Each |
| Technical Data Sheet (281.13KB) EN |
View or download |
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