Product Overview
STMICROELECTRONICS SCT018W65G3AG Silicon Carbide MOSFET, Single, N Channel, 55 A, 650 V, 0.027 ohm, HiP247
Product details
| MOSFET Module Configuration |
Single |
| Continuous Drain Current Id |
55A |
| Drain Source On State Resistance |
0.027ohm |
| No. of Pins |
3Pins |
| Gate Source Threshold Voltage Max |
4.2V |
| Operating Temperature Max |
200°C |
| SVHC |
No SVHC (25-Jun-2025) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
650V |
| Transistor Case Style |
HiP247 |
| Rds(on) Test Voltage |
18V |
| Power Dissipation |
398W |
| Product Range |
- |
Other details
| Brand |
STMICROELECTRONICS |
| Part Number |
SCT018W65G3AG |
| Quantity |
Each |
| Technical Data Sheet (467.90KB) EN |
View or download |
| Product Change Notice (1.11MB) EN |
View or download |
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