Product Overview
GENESIC G3F09MT12G3T Silicon Carbide MOSFET, Three Level Inverter, N Channel, 1.2 kV, 9300 µohm, Module
Product details
| MOSFET Module Configuration |
Three Level Inverter |
| Continuous Drain Current Id |
104A |
| Drain Source On State Resistance |
9300µohm |
| No. of Pins |
34Pins |
| Gate Source Threshold Voltage Max |
- |
| Operating Temperature Max |
- |
| SVHC |
No SVHC (21-Jan-2025) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
1.2kV |
| Transistor Case Style |
Module |
| Rds(on) Test Voltage |
18V |
| Power Dissipation |
216W |
| Product Range |
SiCPAK G Series |
Other details
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
