Product Overview
GENESIC G3F05MT12GB2 Silicon Carbide MOSFET, Half Bridge, N Channel, 216 A, 1.2 kV, 6200 µohm, Module
Product details
| MOSFET Module Configuration |
Half Bridge |
| Continuous Drain Current Id |
216A |
| Drain Source On State Resistance |
6200µohm |
| No. of Pins |
36Pins |
| Gate Source Threshold Voltage Max |
4.3V |
| Operating Temperature Max |
175°C |
| SVHC |
No SVHC (21-Jan-2025) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
1.2kV |
| Transistor Case Style |
Module |
| Rds(on) Test Voltage |
18V |
| Power Dissipation |
444W |
| Product Range |
SiCPAK G Series |
Other details
| Brand |
GENESIC |
| Part Number |
G3F05MT12GB2 |
| Quantity |
Each |
| Technical Data Sheet (98.00B) EN |
View or download |
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