Product Overview
WEEN SEMICONDUCTORS WMSC006H12B2S6T Silicon Carbide MOSFET, Half Bridge, N Channel, 200 A, 1.2 kV, 0.01 ohm, WeEnPACK-B2
Product details
| MOSFET Module Configuration |
Half Bridge |
| Continuous Drain Current Id |
200A |
| Drain Source On State Resistance |
0.01ohm |
| No. of Pins |
36Pins |
| Gate Source Threshold Voltage Max |
3.5V |
| Operating Temperature Max |
150°C |
| SVHC |
No SVHC (21-Jan-2025) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
1.2kV |
| Transistor Case Style |
WeEnPACK-B2 |
| Rds(on) Test Voltage |
18V |
| Power Dissipation |
278W |
| Product Range |
- |
Other details
| Brand |
WEEN SEMICONDUCTORS |
| Part Number |
WMSC006H12B2S6T |
| Quantity |
Each |
| Technical Data Sheet (944.13KB) EN |
View or download |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
