Product Overview
1ED21271S65FXUMA1 is a 1ED21x7x family 650V high-side gate driver with overcurrent protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD). The over-current protection and under-voltage lockout circuit detects over-current / under-voltage in the driven power transistor and terminates the gate drive voltage. An open-drain FAULT signal is provided to indicate that an over-current shutdown has occurred. Potential applications include motor drives, general purpose inverters, Forklift, and light electric vehicles.
- Infineon thin-film-SOI-technology
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Negative VS transient immunity of 100V
- Detection of overcurrent and under voltage supply
- Multi-function RCIN/fault/enable (RFE) with programmable fault clear time
- High-side floating well supply offset voltage is 650V max at TA =25°C
- VCC quiescent supply current is 400µA max at (VCC– COM) = (VB – VS) = 15V and TA = 25°C
- Si MOSFET target transistor
- PG-DSO-8 package
- Ambient temperature range from -40 to 125°C
Product details
| No. of Channels |
1Channels |
| Driver Configuration |
High Side |
| No. of Pins |
8Pins |
| IC Mounting |
Surface Mount |
| Source Current |
4A |
| Supply Voltage Min |
6.6V |
| Operating Temperature Min |
-40°C |
| Input Delay |
55ns |
| Product Range |
- |
| SVHC |
No SVHC (25-Jun-2025) |
| Gate Driver Type |
Non-Isolated |
| Power Switch Type |
Si MOSFET |
| IC Case / Package |
SOIC |
| Input Type |
Logic |
| Sink Current |
-4A |
| Supply Voltage Max |
22V |
| Operating Temperature Max |
125°C |
| Output Delay |
55ns |
| Qualification |
- |
Other details
| Brand |
INFINEON |
| Part Number |
1ED21271S65FXUMA1 |
| Quantity |
Each |
| Technical Data Sheet (111.00B) EN |
View or download |
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