Product Overview
MT53E1G16D1ZW-046 WT:C is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
- Frequency range: 2133–10MHz (data rate range per pin: 4266–20Mb/s)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability
- 2GB (16Gb) total density, 4266Mb/s data rate per pin
- 200-ball TFBGA package
- Operating temperature range from –25°C to +85°C
Product details
| DRAM Type |
Mobile LPDDR4 |
| Memory Configuration |
1G x 16bit |
| IC Case / Package |
TFBGA |
| Supply Voltage Nom |
1.1V |
| Operating Temperature Min |
-20°C |
| Product Range |
- |
| Memory Density |
16Gbit |
| Clock Frequency Max |
2.133GHz |
| No. of Pins |
200Pins |
| IC Mounting |
Surface Mount |
| Operating Temperature Max |
85°C |
| SVHC |
No SVHC (27-Jun-2024) |
Other details
| Brand |
MICRON |
| Part Number |
MT53E1G16D1ZW-046 WT:C |
| Quantity |
Each |
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