Product Overview
ONSEMI NVH4L060N065SC1 Silicon Carbide MOSFET, EliteSiC, N Channel, 47 A, 650 V, 0.07 ohm, TO-247
Product details
| MOSFET Module Configuration |
- |
| Continuous Drain Current Id |
47A |
| Drain Source On State Resistance |
0.07ohm |
| No. of Pins |
4Pins |
| Gate Source Threshold Voltage Max |
4.3V |
| Operating Temperature Max |
175°C |
| SVHC |
Lead (25-Jun-2025) |
| Channel Type |
N Channel |
| Drain Source Voltage Vds |
650V |
| Transistor Case Style |
TO-247 |
| Rds(on) Test Voltage |
18V |
| Power Dissipation |
176W |
| Product Range |
- |
Other details
| Brand |
ONSEMI |
| Part Number |
NVH4L060N065SC1 |
| Quantity |
Each |
| Technical Data Sheet (235.86KB) EN |
View or download |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.