Product Overview
N-channel high voltage depletion mode power MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current regulators and active loads applications.
- High voltage package
- High blocking voltage
- Normally ON mode
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount
- Space savings
- High power density
Product details
| Channel Type |
N Channel |
| Continuous Drain Current Id |
1.6A |
| Transistor Case Style |
TO-263HV |
| Rds(on) Test Voltage |
0V |
| Power Dissipation |
100W |
| Operating Temperature Max |
150°C |
| Qualification |
- |
| Drain Source Voltage Vds |
1kV |
| Drain Source On State Resistance |
10ohm |
| Transistor Mounting |
Surface Mount |
| Gate Source Threshold Voltage Max |
4.5V |
| No. of Pins |
3Pins |
| Product Range |
- |
Other details
| Brand |
LITTELFUSE |
| Part Number |
IXTA1R6N100D2HV |
| Quantity |
Each |
| Product Change Notice (676.33KB) EN |
View or download |
| Technical Data Sheet (220.86KB) EN |
View or download |
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