| ₹ 1825.73 includes GST and import duties. | |
| B2B customers can avail ₹ 278.42 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
The IXFH50N60P3 is a 600V N-channel Enhancement Mode Polar3™ Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Avalanche rated
- Low inductance
- High power density
- Easy to mount
- Space-savings
Applications
Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts
Product details
| Channel Type | N Channel |
| Continuous Drain Current Id | 50A |
| Transistor Case Style | TO-247 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 1.04W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Drain Source Voltage Vds | 600V |
| Drain Source On State Resistance | 0.16ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 3Pins |
| Product Range | - |
Other details
| Brand | IXYS SEMICONDUCTOR |
| Part Number | IXFH50N60P3 |
| Quantity | Each |
| Technical Data Sheet (147.53KB) EN | View or download |
| Product Change Notice (320.77KB) EN | View or download |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 1789.22 |
| 3-5 | ₹ 1770.96 |
| 5-10 | ₹ 1734.44 |
| 10+ | ₹ 1697.93 |
Bulk discount will be automatically applied during checkout based on quantity.