| ₹ 162.33 includes GST and import duties. | |
| B2B customers can avail ₹ 24.76 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
The MJD112T4 is a NPN complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout. It has monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
- Good hFE linearity
- High fT frequency
Applications
Industrial, Power Management
Product details
| Transistor Polarity | NPN |
| Power Dissipation Pd | 20W |
| RF Transistor Case | TO-252 (DPAK) |
| DC Current Gain hFE | 200hFE |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Collector Emitter Voltage V(br)ceo | 100V |
| DC Collector Current | 2A |
| No. of Pins | 3Pins |
| Transistor Mounting | Surface Mount |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | MJD112T4 |
| Quantity | Each |
| Technical Data Sheet (379.29KB) EN | View or download |
| Product Change Notice (573.88KB) EN | View or download |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 159.08 |
| 3-5 | ₹ 157.46 |
| 5-10 | ₹ 154.21 |
| 10+ | ₹ 150.97 |
Bulk discount will be automatically applied during checkout based on quantity.