Product Overview
The FDC610PZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
- High performance Trench technology for extremely low RDS (ON)
- 17nC typical low gate charge
Product details
| Channel Type |
P Channel |
| Continuous Drain Current Id |
4.9A |
| Transistor Case Style |
SuperSOT |
| Rds(on) Test Voltage |
10V |
| Power Dissipation |
800mW |
| Operating Temperature Max |
150°C |
| Qualification |
- |
| SVHC |
No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds |
30V |
| Drain Source On State Resistance |
0.042ohm |
| Transistor Mounting |
Surface Mount |
| Gate Source Threshold Voltage Max |
2.2V |
| No. of Pins |
6Pins |
| Product Range |
- |
| MSL |
MSL 1 - Unlimited |
Other details
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