Product Overview
The TSHF5410 is a 890nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology. It is moulded in a clear, untinted plastic package. It is suitable for use in infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements, transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK -coded, 450KHz or 1.3MHz).
- High speed
- High reliability
- High radiant power
- High radiant intensity
- ϕ = ±22° Angle of half intensity
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- 12MHz High modulation bandwidth (fc)
Product details
| Peak Wavelength |
890nm |
| Diode Case Style |
T-1 3/4 (5mm) |
| Rise Time |
30ns |
| Forward Current If(AV) |
100mA |
| Operating Temperature Min |
-40°C |
| Automotive Qualification Standard |
- |
| MSL |
- |
| Angle of Half Intensity |
22° |
| Radiant Intensity (Ie) |
30mW/Sr |
| Fall Time tf |
30ns |
| Forward Voltage VF Max |
1.4V |
| Operating Temperature Max |
85°C |
| Product Range |
- |
| SVHC |
No SVHC (07-Nov-2024) |
Other details
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