Product Overview
950nm infrared emitting diode in GaAs suitable for use in radiation source in near infrared range.
- Leaded package type
- T-¾ package form
- High reliability
- Angle of half intensity of ±12°
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- Package matches with detector BPW17N
Product details
| Peak Wavelength |
950nm |
| Diode Case Style |
T-3/4 (1.8mm) |
| Rise Time |
800ns |
| Forward Current If(AV) |
50mA |
| Operating Temperature Min |
-25°C |
| Automotive Qualification Standard |
- |
| MSL |
- |
| Angle of Half Intensity |
12° |
| Radiant Intensity (Ie) |
800mW/Sr |
| Fall Time tf |
- |
| Forward Voltage VF Max |
1.3V |
| Operating Temperature Max |
85°C |
| Product Range |
- |
| SVHC |
No SVHC (07-Nov-2024) |
Other details
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