| ₹ 3057.69 includes GST and import duties. | |
| B2B customers can avail ₹ 466.3 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (200°C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| MOSFET Module Configuration: Single |
| Channel Type: N Channel |
| Continuous Drain Current Id: 40A |
| Drain Source Voltage Vds: 1.2kV |
| Drain Source On State Resistance: 0.08ohm |
| Transistor Case Style: HiP247 |
| No. of Pins: 3Pins |
| Rds(on) Test Voltage: 20V |
| Gate Source Threshold Voltage Max: 2.6V |
| Power Dissipation: 270W |
| Operating Temperature Max: 200°C |
| Product Range: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | SCT30N120 |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 2996.54 |
| 3-5 | ₹ 2965.96 |
| 5-10 | ₹ 2904.81 |
| 10+ | ₹ 2843.65 |
Bulk discount will be automatically applied during checkout based on quantity.