EVSTGAP2SICSN is a half-bridge evaluation board designed to evaluate the STGAP2SICSN isolated single gate driver. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making the device suitable also for high power inverter applications such as motor drivers in industrial applications equipped with SiC power switch. The separated source and sink outputs allow to independently optimize turn-on and turn-off by using dedicated gate resistors. The device integrates protection functions: UVLO and thermal shutdown are included to easily design high reliability systems. Dual input pins allow choosing the control signal polarity and implementing HW interlocking protection to avoid cross-conduction in case of controller's malfunction. The device allows implementing negative gate driving, and the on-board isolated DC-DC converters allow working with optimized driving voltage for SiC.
- Half bridge configuration, high voltage rail up to 520 V
- SCT35N65: 650V, 55mohm SiC MOSFET
- Negative gate driving
- On-board isolated DC-DC converters to supply high-side and low-side gate drivers
- 3.3V VDD logic supply generated on-board or 5V (externally applied)
- Easy jumper selection of driving voltage configuration: +17/0V; +17/-3V; +19/0V; +19/-3V
Footnotes Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
STMICROELECTRONICS |
| Part Number |
EVSTGAP2SICSN |
| Quantity |
Each |
| Technical Data Sheet EN |
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