| ₹ 7416.02 includes GST and import duties. | |
| B2B customers can avail ₹ 1130.94 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
This is a GD200HFX65C8S IGBT Module , Half Bridge, 247 A, 1.45 V, 612 W, 150 °C, Module product from STARPOWER with the model number GD200HFX65C8S
Product details
| IGBT Configuration | Half Bridge |
| DC Collector Current | 247A |
| Collector Emitter Saturation Voltage Vce(on) | 1.45V |
| Power Dissipation Pd | 612W |
| Junction Temperature Tj Max | 150°C |
| Transistor Case Style | Module |
| IGBT Termination | Stud |
| Collector Emitter Voltage V(br)ceo | 650V |
| IGBT Technology | Trench Field Stop |
| Product Range | - |
Other details
| Brand | STARPOWER |
| Part Number | GD200HFX65C8S |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 7267.7 |
| 3-5 | ₹ 7193.54 |
| 5-10 | ₹ 7045.22 |
| 10+ | ₹ 6896.9 |
Bulk discount will be automatically applied during checkout based on quantity.