Product details
| MOSFET Module Configuration:
Half Bridge
|
| Channel Type:
Dual N Channel
|
| Continuous Drain Current Id:
567A
|
| Drain Source Voltage Vds:
1.2kV
|
| Drain Source On State Resistance:
-
|
| Transistor Case Style:
Module
|
| No. of Pins:
11Pins
|
| Rds(on) Test Voltage:
-
|
| Gate Source Threshold Voltage Max:
4.8V
|
| Power Dissipation:
1.78kW
|
| Operating Temperature Max:
150°C
|
| Product Range:
-
|
Other details
| Brand |
ROHM |
| Part Number |
BSM600D12P4G103 |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
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