BD2320UEFJ-LAE2 is a 100V maximum voltage high-side and low-side gate driver which can drive external Nch-FET using the bootstrap method. The driver includes a 100V bootstrap diode and independent inputs control for the high-side and low-side. Under voltage lockout circuits are built in for high-side and low-side. Typical applications are power supplies for telecom and datacom, MOSFET application, half-bridge and full-bridge converters, forward converters.
- Long-time support product for industrial applications
- Under voltage lockout (UVLO) for high-side and low-side driver
- 3.3V and 5.0V interface voltage
- Output In-phase with input signal
- High-side supply voltage and floating voltage is 100V
- Output voltage range from 7.5V to 14.5V, output current Io+/Io- is 3.5A/4.5A
- Propagation delay is 27ns (typ), delay matching is 12ns (max)
- Offset voltage pin leak current is 10µA (maximum)
- Operating temperature range from -40°C to +125°C
- Dimension is 4.9mm W (typ) x 6mm D (typ) x 1mm H (max)
Product details
| No. of Channels:
2Channels
|
| Gate Driver Type:
-
|
| Driver Configuration:
High Side and Low Side
|
| Power Switch Type:
MOSFET
|
| No. of Pins:
8Pins
|
| IC Case / Package:
HTSOP-J
|
| IC Mounting:
Surface Mount
|
| Input Type:
Non-Inverting
|
| Source Current:
3.5A
|
| Sink Current:
4.5A
|
| Supply Voltage Min:
7.5V
|
| Supply Voltage Max:
14.5V
|
| Operating Temperature Min:
-40°C
|
| Operating Temperature Max:
125°C
|
| Input Delay:
27ns
|
| Output Delay:
29ns
|
| Product Range:
-
|
| Qualification:
-
|
Other details
| Brand |
ROHM |
| Part Number |
BD2320UEFJ-LAE2 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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