RENESAS RMLV0408EGSB-4S2#HA1 SRAM, Asynchronous SRAM, LPSRAM, 4 Mbit, 512Kword x 8bit, TSOP-II, 32 Pins, 2.7 V

RMLV0408E series 4Mb advanced LPSRAM (512-kword × 8bit). It is a family of 4-Mbit static RAMs organized 524,288-word × 8bit, fabricated by Renesas�s high-performance Advanced LPSRAM technologies. This has realized higher density, higher performance, and low power consumption. It offers low power standby power dissipation, therefore, it is suitable for battery backup systems.

• Maximum access time is 45ns, typical current consumption standby is 0.3µA
• Equal access and cycle times, common data input and output three state output
• Directly TTL compatible all inputs and outputs, battery backup operation
• Supply voltage range from 2.7 to 3.6V, input high voltage is 2.2V (min)
• Input leakage current is 1µA (max, Vin = VSS to VCC)
• Operating current is 10mA (max, CS# =VIL, others = VIH/VIL, II/O = 0mA)
• Standby current is 0.3mA (max, CS2 = VIL, others = VSS to VCC)
• Input capacitance is 8pF (max, Vin =0V, Vcc = 2.7 to 3.6V, f = 1MHz, Ta = -40 to +85°C)
• Read cycle time is 45ns (minimum)
• 32-pin plastic TSOP package, temperature range from -40 to +85°C