Renesas HIP2100IBZ HIP2100IBZ Dual Power Driver Half Bridge 9V-14V Supply 2A Out 20ns Delay SOIC-8

The HIP2100IBZ is a 100V high frequency half bridge N-channel power MOSFET Driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under-voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.

• Drives N-channel MOSFET half bridge
• Bootstrap supply maximum voltage to 114VDC
• On-chip 1R bootstrap diode
• Fast propagation times for multi-MHz circuits
• Drives 1000pF load with rise and fall times typical 10ns
• CMOS input thresholds for improved noise immunity
• Independent inputs for non-half bridge topologies
• No start-up problems
• Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt
• Low power consumption
• Wide supply range
• Supply under-voltage protection
• 3R Driver output resistance
• Near chip scale package footprint, which improves PCB efficiency and has a thinner profile

Applications

Power Management

Warnings ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand	RENESAS
Part Number	HIP2100IBZ
Quantity	Each
Technical Data Sheet EN
Product Change Notice EN

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