₹ 174.3 includes GST and import duties. | |
B2B customers can avail ₹ 26.58 ITC on this product | |
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Description
The SI4532DY is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
Applications
Industrial, Power Management, Computers & Computer Peripherals
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type: Complementary N and P Channel |
Drain Source Voltage Vds N Channel: 30V |
Drain Source Voltage Vds P Channel: 30V |
Continuous Drain Current Id N Channel: 3.9A |
Continuous Drain Current Id P Channel: 3.9A |
Drain Source On State Resistance N Channel: 0.053ohm |
Drain Source On State Resistance P Channel: 0.053ohm |
Transistor Case Style: SOIC |
No. of Pins: 8Pins |
Power Dissipation N Channel: 2W |
Power Dissipation P Channel: 2W |
Operating Temperature Max: 150°C |
Product Range: - |
Qualification: - |
MSL: MSL 1 - Unlimited |
Other details
Brand | ONSEMI |
Part Number | SI4532DY |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 170.81 |
3-5 | ₹ 169.07 |
5-10 | ₹ 165.59 |
10+ | ₹ 162.1 |
Bulk discount will be automatically applied during checkout based on quantity.